Description
Characteristics:
• Up to 10% more energy than crystalline silicon in most climates
• Industry leading temperature coefficient (-0.26%/°C) provides greater
energy yield in most operating conditions
• Proprietary cell and circuit design minimizes impact of shade and debris
CEC listed, PTC/STC ratio of 92.9%
• Potential Induced Degradation (PID) resistant and free of Light Induced
Degradation (LID) effects
• Designed and tested to survive harsh conditions
• Industry leading temperature coefficient (-0.26%/°C) provides greater
energy yield in most operating conditions
• Proprietary cell and circuit design minimizes impact of shade and debris
CEC listed, PTC/STC ratio of 92.9%
• Potential Induced Degradation (PID) resistant and free of Light Induced
Degradation (LID) effects
• Designed and tested to survive harsh conditions
World-Class Components and Equipment Description:
Type: CIGS
Rated Power: 135W
Open Circuit Voltage: 104.5V
Short Circuit Current: 1.77A
Maximum Power Voltage: 84.5V
Maximum Power Current: 1.58A
Module Efficiency (%): 14.4%
Maximum System Voltage: DC 1000V
Junction Box: IP67
Dimension: 1190 x 790 x 7.3 mm
Weight: 16.5kg
